| abstract |
The present invention relates to providing a sputtering target capable of suppressing the occurrence of abnormal discharge during film formation of an oxide semiconductor film using the sputtering method, and enabling continuous and stable film formation. The present invention provides an oxide for a sputtering target that does not have white spots (poor appearance such as irregularities occurring on the surface of the sputtering target) on a surface having a rare earth oxide C-type crystal structure. The present invention is an oxide sintered body having a bixbite structure and containing indium oxide, gallium oxide, and zinc oxide, wherein the composition amount of indium (In), gallium (Ga), and zinc (Zn) satisfies the following formula in atomic%. It provides the sintered compact in a composition range. In / (In + Ga + Zn) <0.75 |