| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2009-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_621b2912540f8fca3cc01777dcbefbac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1468acad0639dea573cee9c4840316cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb786a45a65ae84c52c519b6edc55f96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fce6a73ab380c6aa1b4be1a7db1b3c48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd97a2850f4af9521a64a4b9ef672b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0299dcd598af28beb6f62b97bf15c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5d665bd41f0077b9a7096ef836b9521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1bd9d1973f2fcd1f7a871384584ae4e |
| publicationDate |
2011-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110016916-A |
| titleOfInvention |
Method for Critical Dimension Reduction Using Conformal PeCd Films |
| abstract |
A method and apparatus are provided for forming narrow vias in a substrate. The pattern recess is etched into the substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and the bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate from below. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140060253-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210021503-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011379-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658040-B2 |
| priorityDate |
2008-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |