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filingDate 2009-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b96df9e515a0484848703a549fa3733
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publicationDate 2011-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110013356-A
titleOfInvention A medium that stores the charge of a continuous junction field effect transistor in memory using a combination of physical supports or processing and active semiconductor oxides that produce and use paper based on natural or synthetic cellulose fibers.
abstract The present invention provides fibers of paper material as well as metal or inert semiconductors to produce drains and sources that allow the interconnection of fibers, in addition to gate electrode contacts, particularly P or N types in single or mixed form, present on the other side of the paper. Storage derivatives or storage media of electrical ion charge in a discrete or interconnected field effect transistor using organic or inorganic active semiconductors for the manufacture of channel regions deposited on the substrate, and to natural cellulose fibers, synthetic fibers or mixed fibers as physical supports. Describe the formation and use of the base material.
priorityDate 2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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