| abstract |
Disclosed is a photoresist composition for forming a self-aligning double pattern, which can cause a thickness reduction in a photoresist film and pattern of an unexposed part. The photoresist composition is 0.5 to 15% by weight of a polymer represented by the formula (1); And the remaining solvent, and in the development process for removing the boundary layer, the developer causes a thickness reduction in the photoresist film and pattern of the non-exposed portion. [Formula 1] In Formula 1, R 1 is each independently hydrogen or a methyl group, R 2 is hydrogen or a linear or branched alkyl group of 1 to 5 carbon atoms, R 3 is an alkyl group including a lactone group or lactone group of 4 to 10 carbon atoms R 4 is an alkyl group having 8 to 15 carbon atoms substituted with a hydroxy group and a fluorine group, X is an oxygen or ester group, and a, b, c and d are mole% of each repeating unit with respect to the total monomers forming the polymer. , 20 to 60 mol%, 10 to 60 mol%, 20 to 60 mol% and 0 to 30 mol%, respectively. |