| abstract |
A non-labeled, highly sensitive nanowire transistor sensor, a manufacturing method, and a biomolecule detection apparatus using the same are proposed. In the proposed nanowire transistor sensor, a nanowire transistor sensor is formed between a gate and a source and a drain formed on the gate, and an insulating layer having a channel region formed between the gate and the source and the drain, respectively. And a nanowire connecting the source and the drain to each other and including a receptor having a biomaterial specificity on a surface facing the gate. In addition, the proposed nanowire transistor sensor manufacturing method comprises the steps of forming a gate; Forming an insulating layer on the gate; Forming nanowires on the insulating layer so as to be perpendicular to the stacking direction of the gate and the insulating layer; Forming a source and a drain spaced apart from each other on the insulating layer, wherein the source and the drain are connected to each other with nanowires; Etching the insulating layer to form a channel region; And surface treating the nanowires to include a receptor having a biomaterial specificity. |