http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110009778-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e0e198c61272efb7e6bfaf919ff8d6b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5570a8d967cef2244e436c744c66fb1d |
| publicationDate | 2011-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110009778-A |
| titleOfInvention | Zinc-oxide based light emitting device and method of manufacturing the same |
| abstract | A zinc oxide light emitting device and a method of manufacturing the same are disclosed. The zinc oxide light emitting device can be realized by maximizing the quantum well layer and the quantum barrier layer in the multi-quantum well structure. In addition, the present invention provides a method of manufacturing a zinc oxide light emitting device in which the tunneling phenomenon of the charge carrier is reduced by controlling the thickness of the quantum barrier layer. n n Zinc Oxide (ZnO), Multi Quantum Well, Quantum Well Layer, Quantum Barrier Layer, Tunneling |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101285925-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101238672-B1 |
| priorityDate | 2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.