Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_17c6c7da627b7bead7208250127b52c2 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate |
2009-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd9201e22770e1fe7fdb35936ccb2538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_824676f188555acd0fcb5488beed86c8 |
publicationDate |
2011-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20110008416-A |
titleOfInvention |
Resist for electron beam lithography and developing method for resist for electron beam lithography |
abstract |
The present invention relates to a resist for electron beam lithography excellent in sensitivity and resolution for an electron beam and a method for developing the resist for electron beam lithography. The resist for electron beam lithography according to the present invention includes a copolymer having a number average molecular weight of 500 to 30,000 formed by copolymerizing a compound of Formula 1, a compound of Formula 2 and a compound of Formula 3.n n n <Formula 1> <Formula 2> <Formula 3> |
priorityDate |
2009-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |