| abstract |
The present invention relates to a gate all around device and a method of manufacturing the same, and more particularly, a bottom-up gate all around structure in which a nanowire channel is formed in a suspended structure between a source and a drain, and a gate electrode surrounds the nanowire channel. An element and a method of manufacturing the same.n n n The bottom-up gate all-around device according to the present invention can increase the ratio between the operating current and the off current, so that the device can be controlled with a small operating voltage and power consumption can be reduced.n n n n Gate All Around, Bottom Up, Nanowire |