| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2010-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9fd808efd8fa0d7b32a363c0f4d667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5d9cf7ff1e489b8fdf9960789a811c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f276d519ba89eed523a468701f069b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2011-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110003284-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
An object of the present invention is to manufacture and provide a highly reliable semiconductor device having a thin film transistor having stable electrical characteristics. In the method of manufacturing a semiconductor device having a thin film transistor having a semiconductor layer including a channel formation region as an oxide semiconductor film, before the oxide semiconductor film is formed, impurities such as moisture present in the gate insulating layer are reduced before the oxide semiconductor film is formed. After the heat treatment (heat treatment for performing dehydration or dehydrogenation) to increase the purity and to reduce moisture, etc., which are impurities, it is slowly cooled in an oxygen atmosphere. In addition to the gate insulating layer and the oxide semiconductor film, impurities such as moisture present at the interface between the film formed in contact with the top and bottom and the oxide semiconductor film are reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120109368-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120109374-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200115671-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593786-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489077-B2 |
| priorityDate |
2009-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |