http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110002781-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed4ea1d855ffcad8422548ea222810d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2010-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0e173200457cf5e59425ba37ce2b038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_879893da34bafe5034b51a358ad91c69 |
| publicationDate | 2011-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110002781-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, comprising depositing a liner on a substrate using radicals of a source gas and a reactant gas, and depositing an interlayer insulating film on a liner using a source gas and an impurity gas. It includes. According to the present invention, various gases or mixtures can be used as the reaction gas to deposit various liners of film quality, and the use of radicals can make the film quality more dense. Therefore, it is possible to reliably prevent the lower penetration of impurities during the deposition of the interlayer insulating film. |
| priorityDate | 2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.