http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100138844-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2010-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fbb7b9de0a89e6b02a4ea495f48b631 |
| publicationDate | 2010-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100138844-A |
| titleOfInvention | Regeneration processing method of semiconductor substrate and manufacturing method of SOI substrate |
| abstract | The present invention reduces the thickness of a removed portion of the separated semiconductor substrate when regenerating the semiconductor substrate after the semiconductor film is separated into a regenerated semiconductor substrate that can be used for the production of the SOI substrate. It is one of the problems to provide a method for regenerating a semiconductor substrate which increases the number of times the substrate can be recycled and used. It is separated using a mixed solution containing a material which functions as an oxidant for oxidizing a semiconductor, a material which dissolves an oxide of the semiconductor, and a material which functions as a moderator for oxidizing the semiconductor and dissolving the oxide of the semiconductor. It is a regeneration processing method of the semiconductor substrate which selectively removes the embrittlement layer and the semiconductor layer which remain | survive in the periphery of the semiconductor substrate after that. Further, by irradiating a plurality of kinds of ions containing at least H 3 + ions generated by hydrogen gas by the ion doping apparatus, the semiconductor film is separated from the semiconductor substrate using an embrittlement layer formed on the semiconductor substrate. |
| priorityDate | 2009-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.