http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100134074-A

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9ec45d973f08c63f3563cd36b0da7b
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publicationDate 2010-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100134074-A
titleOfInvention Photomask Blanks, Photomasks and Photomask Blanks Manufacturing Method
abstract A photomask blank used for fabricating a photomask to which an ArF excimer laser light is applied, having a light shielding film on a light transmissive substrate, wherein the light shielding film is a rear antireflection layer, a light shielding layer, and a surface antireflection layer from a side close to the light transmissive substrate. It has a laminated structure laminated as it is, the film thickness of the whole light shielding film is 60 nm or less, a back surface antireflection layer consists of a film containing a metal, has a 1st etching rate, and a surface reflection prevention layer contains a film A second etching rate, the light shielding layer is made of a film containing the same metal as the metal contained in the back anti-reflection layer or the surface anti-reflection layer, and is slower than the first and third etching rates It has an etching rate, and the film thickness of a light shielding layer is 30% or less of the film thickness of the whole light shielding film, The photomask blank characterized by the above-mentioned.
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