http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100131523-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_203c4e4b9677c902919ad91d5fbb585e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
| filingDate | 2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_323c281688f6e5d206c2f55883a7a412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9649f1b07edf18c4eed7f9e71113f3ef |
| publicationDate | 2010-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100131523-A |
| titleOfInvention | Dye-sensitized solar cell and its manufacturing method |
| abstract | SUMMARY OF THE INVENTION The present invention provides a dye-sensitized solar cell and a manufacturing method thereof in which an excellent photoelectric conversion efficiency is realized by suppressing reverse electron transfer and improving conductivity of an electrode, and also significantly suppressing corrosion of an electrode by an electrolyte solution. The dye-sensitized solar cell of the present invention includes an anode electrode on which a conductive base material including at least a metal current collecting grid is laminated on a light-transmissive base material, a semiconductor porous membrane layer on which a sensitizing dye is adsorbed, and a semiconductor porous film of the anode electrode. A dye-sensitized solar cell having a structure in which an electrolyte is sealed between a cathode electrode facing the layer side and two electrodes of the anode electrode and the cathode electrode, the intermediate layer having an intermediate layer between the conductive substrate and the semiconductor porous membrane layer, The water vapor transmission rate is 0.1 g / (m 2 ยท 24h) or less. |
| priorityDate | 2008-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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