| abstract |
Provided is a reflective mask blank for EUV lithography having an absorber layer capable of easily controlling stress and crystal structure. A reflective mask blank for EUV lithography, wherein a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light are formed at least in this order on the substrate, wherein the absorber layer is tantalum (Ta), nitrogen (N), and hydrogen. (H), The total content of Ta and N in the said absorber layer is 50-99.9 at%, The H content is 0.1-50 at%, The reflective mask blank for EUV lithography characterized by the above-mentioned. |