abstract |
In the semiconductor device manufacturing process, in order to provide the formation method of the Cu wiring film using the adhesion layer (base film) which improved the adhesiveness with Cu wiring film, after forming a barrier film on the board | substrate in which the hole etc. are formed, A PVD-Co film, a CVD-Co film, or an ALD-Co film is formed thereon, and the Co film is filled with a CVD-Cu film or a PVD-Cu film in a hole formed on the surface thereof, and then heated at a temperature of 350 ° C. or less. The process forms a Cu wiring film. |