| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad7b7b4a68c50c942a75b4d963d3f9e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ba091648602cc0c4090f71f17ca0eb2 |
| publicationDate |
2010-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100123741-A |
| titleOfInvention |
A method for selectively forming a dielectric etch stop layer and a transistor comprising a dielectric etch stop layer |
| abstract |
A method of selectively forming a dielectric etch stop layer over a patterned metal feature is provided. Embodiments of the invention include a transistor having such an etch stop layer over the gate electrode. According to some embodiments of the invention, metal is selectively formed on the surface of the gate electrode and then converted to silicide / germanyside. In another embodiment of the present invention, a metal selectively formed on the gate electrode surface enables catalytic growth of silicon or germanium mesa on the gate electrode. At least a portion of the silicide, germanium, silicon mesa or germanium mesa is then oxidized, nitrided or carbonized to form a dielectric etch stop layer only over the gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200019271-A |
| priorityDate |
2008-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |