http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100121982-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a31c3c574a8056fd9bb03c6c4d9cb298 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2009-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39c84227ce482061afad14d1743541ac |
| publicationDate | 2010-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100121982-A |
| titleOfInvention | Plasma doping method and device |
| abstract | PURPOSE: A doping method and a doping device thereof are provided to improve a doping process by supplying O2 gas into a chamber, removing an oxidization layer on the surface of a wafer, and smoothly injecting ion. CONSTITUTION: A plasma doping device includes a chamber(10) executing a process with a vacuum condition. A wafer loading stand(20) in which a semiconductor wafer(S) is loaded is included inside the chamber. The wafer loading stand has an electrostatic chuck structure in order to steadily chuck the wafer. The wafer loading stand is composed so that the high voltage of the negative is applied to through a high voltage pulse feed port(30). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105931951-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106098543-A |
| priorityDate | 2009-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.