http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100121981-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a31c3c574a8056fd9bb03c6c4d9cb298 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2009-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06503c5bad02bebc6e19e8b982ac1390 |
| publicationDate | 2010-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100121981-A |
| titleOfInvention | Plasma Doping Method Using Frequency Modulation |
| abstract | In the plasma doping method using the frequency modulation according to the present invention, when the dopant gas ions are implanted into the object in the ion implantation step, the thickness of the deposition layer is efficiently controlled by controlling the width of the high voltage pulse applied to the wafer to change with time. It can be controlled to prevent the channeling phenomenon that may occur at the initial stage of plasma ion implantation, and to reduce the ion stopping phenomenon caused by the surface adsorption layer that increases as the implantation process proceeds. And it will have the effect of maintaining the injection amount. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103377889-A |
| priorityDate | 2009-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548998 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23969 |
Total number of triples: 16.