http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100119530-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c723e089583d5f718183d054135b7491 |
| publicationDate | 2010-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100119530-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device including a step of cleaning a semiconductor substrate, wherein the step of cleaning comprises: (i) at least 99% by weight of tripropylene glycol monomethyl ether with respect to the entire etching solution, the entire etching solution; 0.4 wt% or less of water, hydrogen fluoride, and an etchant including one or two amines selected from hydroxylamine and ammonia; Or ii) 99% by weight or more of tripropylene glycol monomethyl ether with respect to the whole etching solution, 0.4% by weight or less with respect to the whole etching solution, hydrogen fluoride, and ethylamine, and the molar content ratio of hydrogen fluoride to ethylamine is 5 It is characterized by using the above etching liquid. According to the method of manufacturing a semiconductor device according to the present invention, CD loss can be minimized by using an etchant having a low etching selectivity of an element isolation film with respect to a screen insulating film or an etching selectivity of an interlayer insulating film with respect to a natural oxide film during cleaning of a semiconductor substrate. Can be. |
| priorityDate | 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.