http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100118106-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 2009-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0f62ea42c504a787e4e77689c964a31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_813e0e460b2bf852de31d8762bc4b614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a1fe9ead439503816b839fc3b440b1a |
publicationDate | 2010-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20100118106-A |
titleOfInvention | Resist Pattern Forming Method and Resist Pattern Micronized Resin Composition |
abstract | The present invention provides a step of forming a first resist pattern using a first positive radiation-sensitive resin composition (1), applying a resist pattern-miniaturized resin composition on the first resist pattern, and developing after baking to form a first resist pattern (2) forming a finer second resist pattern, and applying a resist pattern insoluble resin composition onto the second resist pattern, and baking and washing the second resist pattern to a developer and a second positive radiation-sensitive resin Process (3) which makes a 3rd resist pattern insoluble with respect to a composition, and a 2nd resist layer is formed on a 3rd resist pattern using a 2nd positive radiation sensitive resin composition, and a 2nd resist layer is exposed and It relates to a resist pattern forming method comprising the step (4) of developing to form a fourth resist pattern. |
priorityDate | 2008-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 232.