http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100116466-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18c3dd82c2df22ed720da727b310d475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47d0edc9582fb481cb8f2fe6e290e629 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3735 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-36 |
| filingDate | 2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04138115ba3c2e263675b8eff52aa28f |
| publicationDate | 2010-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100116466-A |
| titleOfInvention | Semiconductor heat sink and its manufacturing method |
| abstract | The present invention relates to a semiconductor heat dissipation substrate bonded to a semiconductor chip and to be used for heat dissipation, and a method for manufacturing the same, wherein the semiconductor heat dissipation substrate according to the invention comprises a first composition comprising silicon carbide (SiC), and A second composition comprising aluminum mixed in the first composition is provided, and when the first composition is 100 reference volumes, the second composition is formed by mixing 45 to 65 volumes by mixing with the first composition.n n n The first composition may further include a coating layer surrounding the silicon carbide, the coating layer is formed by coating nickel or copper, when the coating layer is formed of copper, the coating thickness of the coating layer is 0.04 to 0.2㎛, nickel When forming the coating layer, the thickness of the coating layer is preferably 0.2 to 0.5㎛.n n n The heat dissipation substrate for a semiconductor according to the present invention has an advantage that the thermal expansion coefficient is similar to the thermal expansion coefficient of a semiconductor chip to be mounted, so that the bonding state between the semiconductor chip and the heat dissipation substrate for the semiconductor can be stably maintained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102011006177-A1 |
| priorityDate | 2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.