| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8dfd5447275bea4b74d914224d6f207 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8d98310a777428dd156c69bd83ca8e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01858936c8743a25f95d2ba797012064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a2d00c5b63fe7703713db1932ffe51a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_508d21c30e0bfc63853a4870115b7feb |
| publicationDate |
2010-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100111375-A |
| titleOfInvention |
Low Temperature Deposition of Metal Thin Films |
| abstract |
The present invention relates to a method of forming a metal thin film on a low temperature substrate using an organometallic compound precursor and an amine compound. Specifically, a method of forming a metal thin film by dissociating an organometallic compound precursor including a metal coordinating one or more ligands with an amine compound or an amine compound and hydrogen to dissociate a ligand of the organometallic compound precursor on a low temperature substrate. It is about. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349583-B2 |
| priorityDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |