| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33dafb5bbc2ec47ebcb7becbbe60f704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e4c066b3d8185874e461e8305530fe4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-88 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G9-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-584 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G9-08 |
| filingDate |
2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1962992b0fbec65d19994c95e0698928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c29e249eb7c7d469e873835d96c36c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55df32f11d77919f279aa8e3ebee161b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad562a21357fe584619977f8ed6d3bd4 |
| publicationDate |
2010-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100110807-A |
| titleOfInvention |
Method for producing group II-VI compound semiconductor, method for manufacturing group II-VI compound semiconductor phosphor and hexagonal group II-VI compound semiconductor |
| abstract |
The present invention provides a method for producing a high purity group II-VI compound semiconductor stably on an industrial scale, and a group II-VI compound semiconductor having a hexagonal structure with which metal doping and the like are easy. Also provided is a method for producing a II-VI compound semiconductor phosphor. According to the present invention, there is provided a method for producing a II-VI compound semiconductor by pulsed plasma discharge between metal electrodes in sulfur to produce a II-VI compound semiconductor, and a II-VI compound semiconductor phosphor using pulsed plasma discharge. The said subject is solved by the method and hexagonal II-VI compound semiconductor which has two or more twins. |
| priorityDate |
2008-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |