| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-936
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2009-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4691b21a117720f4bd1ecd4a03f5b40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb344c2e5c3ed438eafe56f2be9f37d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_648c1e6b1002162ee772df270db86867 |
| publicationDate |
2010-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100109772-A |
| titleOfInvention |
How to Form Contact Structure |
| abstract |
A method of forming a contact structure is provided. The method includes forming a conductive pattern on the substrate. An interlayer insulating film is formed to cover the conductive pattern. The interlayer insulating layer is patterned to form openings that expose a portion of the conductive pattern. An oxide film is formed on the entire surface of the substrate on which the opening is formed. A reduction process is performed to reduce the oxide film, wherein the oxide film in the bottom region of the opening is reduced to a catalyst film, and the oxide film in a region other than the bottom region of the opening is reduced to a noncatalytic film. Nanomaterials are grown from the catalyst membrane to form contact plugs in the openings. |
| priorityDate |
2009-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |