| abstract |
[PROBLEMS] To provide a solid-state imaging device in which the chip area on which the solid-state imaging device is formed is reduced, and the cost of the chip alone is reduced. In addition, the present invention provides an electronic device that can be miniaturized using the solid-state imaging device. [Solution] The solid-state imaging device of the present invention includes a first substrate 80 on which a photoelectric conversion portion PD is formed, a second substrate 81 on which a charge storage capacitor portion 61 and a plurality of MOS transistors are formed. This is a bonded structure. In addition, connection electrodes 26, 27, 56, and 57 are formed on the first substrate 80 and the second substrate 81, respectively, and the first substrate 80 and the second substrate 81 are formed. ) Is electrically connected by a connecting electrode. This makes it possible to form a solid-state imaging device having a global shutter function in a smaller area. |