http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100102844-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5081169b8c991da399d70ac59c69101 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01G19-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 |
| filingDate | 2009-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8a4da980d4fb3bd54e50bd778f52256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e798987b10512450225530e4b294fb3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36522ae01f9a06ea3996744b0e04de55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b09ce5316d762ad9212a6253cbc19194 |
| publicationDate | 2010-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100102844-A |
| titleOfInvention | Method and apparatus for manufacturing high quality silicon single crystal |
| abstract | The present invention discloses a method and apparatus for producing high quality silicon single crystals. The method for producing a silicon single crystal according to the present invention is a method for producing a silicon single crystal by using a Czochralski method in which a seed crystal is immersed in a silicon melt and the seed crystal is gradually raised to grow a single crystal. Calculating a single crystal pulling speed correction amount by a change or a diameter change; And correcting the single crystal pulling speed according to the calculated pulling speed correction amount to maintain the V / G of the solid-liquid interface center and the periphery within a flawless margin.n n n According to the present invention, even if the melt gap is changed due to the change in the consumption amount of the silicon melt in the shoulder process or the body process, the single crystal pulling speed can be corrected to control the V / G of the solid-liquid interface center and the periphery within a flawless margin. Therefore, even when manufacturing a large diameter silicon single crystal of 300 mm or more having a large change in silicon melt consumption, it is possible to produce a high quality silicon single crystal without V defects or I defects. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101379799-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180076558-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014014224-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220030882-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101443494-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101379800-B1 |
| priorityDate | 2009-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.