http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100102841-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5081169b8c991da399d70ac59c69101 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01G19-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01G19-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 |
| filingDate | 2009-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8a4da980d4fb3bd54e50bd778f52256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e798987b10512450225530e4b294fb3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b09ce5316d762ad9212a6253cbc19194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36522ae01f9a06ea3996744b0e04de55 |
| publicationDate | 2010-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100102841-A |
| titleOfInvention | Method and apparatus for manufacturing high quality silicon single crystal |
| abstract | The present invention discloses a method and apparatus for producing high quality silicon single crystals. The method for producing a silicon single crystal according to the present invention is a method for producing a silicon single crystal by using a Czochralski method in which a seed crystal is immersed in a silicon melt, and then the seed crystal is gradually raised to grow a single crystal. Melt gap change amount is calculated by weight change or diameter change to correct melt gap change, thereby maintaining V / G of the solid-liquid interface within a flawless margin.n n n According to the present invention, the V / G of the solid-liquid interface can be controlled within a flawless margin by correcting a melt gap change caused by a change in the consumption amount of silicon melt in a shoulder process or a body process. Therefore, even when manufacturing a large diameter silicon single crystal of 300 mm or more having a large change in silicon melt consumption, it is possible to produce a high quality silicon single crystal without V defects or I defects. |
| priorityDate | 2009-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.