http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100097053-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58 |
| publicationDate | 2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100097053-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | It is one of the problems to provide a semiconductor layer including a region where a channel of a thin film transistor is formed, and a thin film transistor having a small contact resistance (contact resistance) between a source electrode layer and a drain electrode layer. In addition, it is one of the problems to provide a thin film transistor having a low electrical resistance of wiring. Another object of the present invention is to provide a thin film transistor having a structure in which a carrier can smoothly move a semiconductor layer covering at least a portion of a step formed at ends of a source electrode layer and a drain electrode layer. In forming the thin film transistor, a first wiring layer is formed on the first electrode layer, a second wiring layer is formed on the second electrode layer, the first electrode layer extends from an end of the first wiring layer, and the second electrode layer is the second electrode layer. It extends from the edge part of a wiring layer, and is formed so that a semiconductor layer may electrically connect with the side surface and upper surface of a 1st electrode layer, and the side surface and upper surface of a 2nd electrode layer. |
| priorityDate | 2009-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.