| abstract |
The present invention relates to a CMP slurry capable of minimizing scratches on the surface to be polished while exhibiting excellent polishing performance during chemical mechanical polishing in a semiconductor process.n n n More specifically, the present invention comprises the steps of (a) preparing a cerium oxide dispersion by mixing cerium oxide having a particle size distribution of 0.01mm ~ 10mm, first polyacrylic acid having a weight average molecular weight of 2,000 ~ 8,000, and water; And (b) mixing the cerium oxide dispersion with a second polyacrylic acid having a weight average molecular weight of 5,000 to 10,000. 2. And to a CMP slurry prepared according to the method. |