| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12cb89ffce4650b0a2b827195e0b89ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dcebf5a7f7ddc3b081f70e8ce1c4097 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12229 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22F1-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
2010-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dc1e705e6262fa6123d83259f7a75a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38562d01c74aa05a22e61185515008ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4ceda1ae75758d79f2d425df6d6bc98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41bb28370452c73479cda7c181a62f26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69f8a5e7ceccee986d3e71f7285d1c31 |
| publicationDate |
2010-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100080890-A |
| titleOfInvention |
Al-based alloy sputtering target and manufacturing process thereof |
| abstract |
The present invention relates to an Al-based alloy sputtering target containing Ni in an amount of 0.05 to 10 atomic%, wherein the crystal orientation in the direction perpendicular to the sputtering surface of the Al-based alloy sputtering target <001>, <011 >, <111> and <311> are observed according to the electron backscattering diffraction pattern method, the P values are <001> ± 15 °, <011> ± 15 °, <111> ± 15 ° and <311> ± When exhibiting a total area fraction of 15 °, the Al-based alloy sputtering target comprises: (1) a component requirement wherein the ratio of the P value to the total area of the sputtering surface is at least 70%; (2) a component requirement that the ratio of the area fraction of ± 15 ° to the P value is 30% or more; (3) The ratio of the area fraction of <111> ± 15 ° to the P value satisfies the construction requirement of 10% or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210088030-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113125481-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210088031-A |
| priorityDate |
2006-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |