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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c211a07b6b2314e12dc64c77130d952
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publicationDate 2010-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100080829-A
titleOfInvention Quantum well mixing
abstract Embodiments of the quantum well mixing (QWI) method include a wafer consisting of upper and lower epitaxial layers 10 and 13, each including a barrier layer, and at least disposed between the upper and lower epitaxial layers 10 and 13. Providing one quantum well layer 11; Stacking at least one sacrificial layer (21) on the upper epitaxial layer; And laminating a QWI reinforcement layer 31 on a portion of the sacrificial layer to form a QWI reinforcement region and a QWI suppression region, wherein a portion under the QWI reinforcement layer 31 is the QWI reinforcement region, and another The portion is the QWI suppression region. The method includes stacking a QWI suppression layer 41 on the QWI enhancement region and the QWI suppression region; And annealing at a temperature sufficient to cause interdiffusion of atoms between the quantum well layer 11 and the barrier layer of the upper and lower epitaxial layers 10 and 13.
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