| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2008-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05796df484d7fb76b422784300a83e15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdb9e0bd851dda7a3a21e7cdb6f9a5d3 |
| publicationDate |
2010-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100080815-A |
| titleOfInvention |
Crystal growth method of nitride semiconductor and nitride semiconductor and nitride semiconductor light emitting device |
| abstract |
In the crystal growth of a nitride semiconductor on a nitride substrate of a nonpolar plane such as the m plane, the gas constituting the main flow in a temperature rising process in a relatively high temperature region before the nitride semiconductor layer is grown. The atmosphere (exposed atmosphere) and the gas constituting the main flow up to completion of the growth of the first and second nitride semiconductor layers (atmosphere where the nitride main surface of the gas is exposed) are mainly made to have no etching effect on the nitride, and further, the nitride semiconductor Si source was not supplied at the start of layer growth. For this reason, desorption of nitrogen atoms from the nitride surface vicinity of the epitaxial gas does not occur, and introduction of a defect into the epitaxial film is suppressed. In addition, epitaxial growth having a surface morphology excellent in flatness is enabled. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160148421-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150035208-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140146134-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200081517-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10570530-B2 |
| priorityDate |
2007-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |