| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aafe0172ffd94d3486c518b0709bb2b3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2008-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0413dbcdc1e4cde12e814fca1e7efe3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_685bbe5a9510f83733ff7aabf6615392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4445ca5d86e19df7d61dce3199573d81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b8afafd0f943e93866e15f5f8d7f889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6a491e3e9602e78c76c99d08433a485 |
| publicationDate |
2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100078851-A |
| titleOfInvention |
A polymer, a polymer composition, a resist underlayer film composition comprising the same, and a patterning method of a material using the same |
| abstract |
The present invention relates to a polymer, a polymer composition, a resist underlayer film composition including the same, and a patterning method of a material using the same. The polymer according to the present invention has a repeating unit represented by the following Chemical Formula 1.n n n [Formula 1]n n n n n n n n (In Formula 1, the definitions of Ar 1 and Ar 2 are as described in the specification.)n n n The polymer, the polymer composition, and the resist underlayer film composition according to the present invention have a refractive index and absorbance within a suitable range as an antireflection film in a DUV (deep UV) wavelength region such as ArF (193 nm) and KrF (248 nm) when forming a film. The reflectivity between the resist and the underlying layer can be minimized, and the lithographic technique has high etching selectivity and sufficient resistance to multiple etching, thereby providing a lithographic structure excellent in pattern shape and margin. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2574610-A |
| priorityDate |
2008-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |