| abstract |
This embodiment of the present invention generally relates to a method of forming a III-V material by a hydride gas phase epitaxy (HVPE) process. In one embodiment, a method of forming a gallium nitride material on a substrate in a process chamber, wherein the metallic source is heated to form a heated metallic source containing gallium, aluminum, indium, alloys thereof, or combinations thereof. And forming a metallic chloride gas while exposing the heated metallic source to chlorine gas, and forming a metal nitride layer on the substrate while exposing the substrate to metallic chloride gas and nitrogen precursor gas during the HVPE process. do. Such a method further provides for exposing the substrate to chlorine gas during the pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the process chamber is heated to about 200 ° C. or less during the pretreatment process. |