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filingDate 2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80ef552c51996da668b98c65da511d09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_926b08cd2f1681877250ba029f56b2fb
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publicationDate 2010-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100064343-A
titleOfInvention Sulfonium salts, acid generators and resist materials, photomask blanks, and pattern forming methods using the same
abstract The present invention provides a sulfonium salt represented by the formula (1).n n n <Formula 1>n n n n n n n n (Wherein, R 1 is the one which may contain a hetero atom represents a hydrocarbon group, R 1 is the case of a vinyl group and isopropenyl group, except, R 2, R 3 and R 4 are an alkyl group, an alkenyl group, or oxo An alkyl group, or an aryl group, an aralkyl group or an aryloxoalkyl group, or any two or more of R 2 , R 3 and R 4 may combine with each other to form a ring together with a sulfur atom in the formula, n is 1 To an integer of 3).n n n The chemically amplified resist material of the present invention has excellent focus margin, less line width fluctuation and shape deterioration even when PED is extended for a long time, excellent pattern profile shape after development, and high resolution suitable for fine processing.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210022028-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9958775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210099185-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190058293-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160036511-A
priorityDate 2008-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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