| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 |
| filingDate |
2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5347c33daaf275aa2ab03ae3fdeb0c9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_625743f69338f3dfa254326d2038f5be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86c4bd9bd04f9870ac668c91bfb71e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee2caaa6cf005675ee354c7a2b91b059 |
| publicationDate |
2010-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100061360-A |
| titleOfInvention |
Silicon single crystal and its growth method, silicon wafer and its manufacturing method |
| abstract |
The method for growing a silicon single crystal of the present invention is a method for growing a silicon single crystal having a hydrogen defect density of 0.003 pieces / cm 2 or less by the Czochralski method, wherein the gas of the hydrogen-containing substance is 40 Pa or more in terms of hydrogen gas. And a crystal growth step performed under an atmosphere gas containing 400 Pa or less, and a cooling state control step of setting the residence time of the hydrogen aggregation temperature range of 850 ° C or less and 550 ° C or more to 100 minutes or more and 480 minutes or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101403248-B1 |
| priorityDate |
2008-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |