| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate |
2008-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17323325080eacd5af10c289d5b0614b |
| publicationDate |
2010-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100058980-A |
| titleOfInvention |
Semiconductor light emitting device and manufacturing method thereof |
| abstract |
The embodiment relates to a semiconductor light emitting device and a method of manufacturing the same.n n n A semiconductor light emitting device according to the embodiment, the conductive layer; An N-type semiconductor layer on the conductive layer; An active layer on the N-type semiconductor layer; A P-type semiconductor layer on the active layer; A second contact layer on the P-type semiconductor layer; A second electrode is included on the second contact layer. |
| priorityDate |
2008-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |