| abstract |
In the resist film used for semiconductor lithography, the anti-reflection film formed on the upper or lower layer of the resist film, the gap fill film, the top coat film, and the like, a method of producing a copolymer solution for semiconductor lithography with a very small irregularity in the film thickness and lithography characteristics is provided. Is provided. This production method includes a repeating unit (A) having a hydroxyl group, a repeating unit (B) having a structure in which a hydroxyl group is protected by a group that inhibits dissolution in an alkaline developer and dissociates under the action of an acid, and a repeating unit having a lactone structure. In the manufacturing method of the copolymer solution containing the copolymer containing (C) and the at least 1 sort (s) or more repeating unit selected from the group which consists of a repeating unit (D) which has a cyclic ether structure, and the solvent for coating-film formation, The width | variety of the copolymer density | concentration for every container in the multiple container with the same manufacturing lot is made into the below a specific range, or a specific manufacturing process is included.n n n Semiconductor lithography, resist films, |