http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100041644-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 2008-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20c32358d6f8f1f2510c0836bc1bce32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb63849aeb6f04608ad8884cc8a6f4a
publicationDate 2010-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100041644-A
titleOfInvention High injection volume strips (HDS) method and apparatus by chemical reaction with hydrogen
abstract The plasma is generated using a hydrogen element, a weak oxidant, and a fluorine containing gas. An inert gas is inserted into the plasma downstream of the plasma source and upstream of the shower head, wherein the shower head directs the gas mixture into the reaction chamber, where the mixture reacts with the high-injection injection photoresist. The treatment removes both the sheath and the bulk resist layer at a high strip rate and allows the workpiece surface to remove residue with minimal silicon loss.
priorityDate 2008-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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