http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100038637-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c6af2da72f0fff3451e249c225808e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_907976a11e1a6814a3925eb3248e38cd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f1b9478a164ed53c6f55b810918dd59 |
| publicationDate | 2010-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100038637-A |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | The present invention is to provide a method for manufacturing a semiconductor device that can improve the short channel effect, and prevent the facet in forming the epitaxial thin film for the strained channel, the present invention is to form an isolation layer on the substrate to define the active region Doing; Forming a gate pattern on the substrate; Etching an active region of a source / drain region between the gate patterns with a target in which the device isolation layer is not exposed; Forming an undoped epitaxial thin film on the etched source / drain regions; And implanting ions into the undoped epitaxial thin film, wherein the gate pattern overlaps the active region of the source / drain region while completely covering the device isolation layer. It is effective to prevent the device isolation layer from being exposed during the etching of the active region of the source / drain and to prevent facet generation. Also, by forming an epitaxial thin film without facets, the ion implantation depth and profile may be reduced. It is easy to adjust, it is possible to form a shallow junction while increasing the strain effect, there is an effect that can suppress the short channel effect. |
| priorityDate | 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.