| abstract |
In the copper plating composition which can fill a high aspect ratio recess, and the formation method of the copper wiring using the same, The insulating film which has a recess is formed on a board | substrate, The electrolyte solution containing copper ion, and is represented by following structural formula (1) The electroplating process using the composition for copper plating containing a disulfide compound as an accelerator is performed, and the copper film which fills a recess on an insulating film is formed.n n n (One)n n n (In Formula 1, R 1 and R 3 are independently of each other methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl or trimethylsilyl, and R 2 and R 4 are independently hydrogen , Methyl, ethyl, propyl, n-butyl, sec-butyl, tert-butyl or trimethylsilyl, Rm and Rn are independently of each other C 1 -C 10 alkylene, C 3 -C 10 cycloalkylene or C 4 -C 10 aromatic hydrocarbons, M 1 + and M 2 + are independently of one another hydrogen ions, alkali metal ions or ammonium ions) |