http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100036180-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f79fda219136a5e542261c767d12b87b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de498babb0c04a00ceb653738877b147 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2009-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c44814e24ed4d7f0de1e30e250519328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6352c02cd0466f4db05c4abdaf01553c |
| publicationDate | 2010-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100036180-A |
| titleOfInvention | Semiconductor device, manufacturing apparatus and manufacturing method thereof |
| abstract | In the low temperature treatment, it is possible to produce the desired SiN film.n n n Means for supplying nitrogen-based gas (nitrogen (N 2 ) gas, ammonia (NH 3 ) gas, diazine (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, etc.) to the object to be treated; Means for supplying a silicon-based gas (having an amino group, a dimethylamino group or an ethylamino group, such as silane gas, disilane gas, disilazane gas, etc.) to the object; Means for doing so.n n n n Low temperature treatment, SiN film, reduced pressure, silane, disilazane, nitrogen gas |
| priorityDate | 2008-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.