| abstract |
For example an electric field comprising a semiconductor region 2, a first contact 3 electrically coupled to the semiconductor region 2, and at least one second contact 4 capacitively coupled to the semiconductor region 2. An element 1 as an effect transistor device is provided. In addition, at least a portion of the semiconductor region 2 between the first contact 3 and the second contact 4 is covered with a dipole layer 6. The dipole layer 6 can serve as a local gate on the semiconductor region 2, so that the electrical properties of the device 1 can be improved. The semiconductor region is for example nanowires. |