| abstract |
The present invention includes bonding a donor substrate 10 and a receiver substrate 20 coated with at least one insulator layer, wherein the semiconductor layer 11, insulator layer 60, and receiver of the donor substrate 10 are bonded. A method of fabricating a semiconductor on insulator structure having a substrate (20), characterized in that it is bonded at a junction interface of a trapping interface (30) that includes electroactive traps suitable for holding charge carriers.n n n The invention also relates to a semiconductor on insulator structure including a trapping interface. |