| abstract |
The plurality of electrode pads 47 disposed on the insulating layer in the semiconductor device 100 and one end thereof are connected to the exposed portions of the electrode pads 47, and are disposed on the insulating layer for each of the electrode pads 47. A plurality of conductive layers 51 and the protruding electrodes 52 disposed on the other end of the conductive layer 51, and the direction in which the conductive layers 51 extend is provided with respect to the electrode pads 47. It extends in a fixed direction, The semiconductor device characterized by the above-mentioned. |