http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100028242-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1146d1dc4ffd66d77c25805ca3f9a74f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e07a2fc554c18a76166e1cf35c3c1c7d |
| publicationDate | 2010-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100028242-A |
| titleOfInvention | Oxide film formation method of semiconductor device |
| abstract | The present invention relates to a method of forming an oxide film of a semiconductor device, and a technical problem to be solved is to maintain a constant thickness without changing the thickness of the oxide film in the boundary region between the active region and the device isolation region.n n n To this end, the present invention provides a trench forming step of forming a trench in a semiconductor substrate, a device isolation layer forming step of forming an isolation layer by filling an insulator in the trench, and a nitride film formation forming a nitride film on the surface of the semiconductor substrate, which is the outer circumference of the device isolation layer. And an oxide film forming step of supplying radical oxygen to the nitride film to form an oxide film having a constant thickness irrespective of the crystal direction of the semiconductor substrate. |
| priorityDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 17.