http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100028069-A

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filingDate 2008-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_394cb70df7a52c13a5cb2f58e7504fff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a73be358ec9f14144e6728132b3a1d8
publicationDate 2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100028069-A
titleOfInvention Method for manufacturing electronic devices using direct copper plating
abstract The present invention relates to a method and structure for metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier to copper; Depositing a copper free seed layer on the diffusion barrier, which is effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and an isometric deposition process. The method further includes electroplating a copper gapfill onto the seed layer. Another aspect of the invention includes an electronic device manufactured using the method and structure according to an embodiment of the invention.
priorityDate 2007-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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