http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100027569-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbffa3b81b3b862dc7220b5648f5f745 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-017 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-84 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B3-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B3-10 |
| filingDate | 2008-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e69c8c3c05c02d7736dbe7368694b76 |
| publicationDate | 2010-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100027569-A |
| titleOfInvention | Transparent electric heating element, transparent resistance element and manufacturing method thereof |
| abstract | The present invention relates to a transparent transparent electric heating element, a transparent resistance element, and a method for manufacturing the same, the transparent electric heating element comprising: a transparent substrate; A transparent resistive element formed on at least a portion of the surface of the transparent substrate, wherein the transparent resistive element comprises titanium oxide as a main component, and the transparent resistive element comprises titanium oxide as a main component, and is transparent The method of manufacturing a resistor device includes preparing a substrate; Forming a transparent resistive element on at least a portion of the surface of the substrate, wherein forming the transparent resistive element is a chemical vapor deposition (CVD; Chemical Vapor Deposition), an organic compound containing titanium (Ti) as a precursor Metal Organic Chemical Vapor Deposition (MOCVD), Atomic Layer Deposition (ALD), Low Pressure Chemical Vapor Deposition (LPCVD) and Plasma Enhanced Vapor Deposition (PECVD) It is characterized in that the deposition by one method selected from). |
| priorityDate | 2008-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.