http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100025940-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1146d1dc4ffd66d77c25805ca3f9a74f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14698 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96374f75d8a076f4303078a513ae2011 |
| publicationDate | 2010-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100025940-A |
| titleOfInvention | Image sensor and its manufacturing method |
| abstract | The embodiment relates to an image sensor to which a high pressure annealing process is applied and a manufacturing method thereof. In another embodiment, a method of manufacturing an image sensor includes: forming a transistor structure on a semiconductor substrate, forming a metal wiring layer on the transistor structure, forming a protective film on the metal wiring layer, and forming a nitride film on the protective film And forming an annealed semiconductor substrate at a high pressure. Embodiments may perform an annealing process under high pressure to remove dangling bonds to improve device properties, particularly to reduce dark current in the image sensor. |
| priorityDate | 2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.