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filingDate 2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_807518a0b5e9443b46fbd57c85996fc0
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publicationDate 2010-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100025870-A
titleOfInvention Process for preparing copper thin film by atomic layer deposition using copper aminoalkoxide precursor
abstract The present invention relates to a method for producing a copper thin film by atomic layer deposition (ALD) using a copper aminoalkoxide precursor as a raw material of copper, to obtain a high quality copper oxide thin film under milder process conditions. Can be.
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